peatirapor1985

Diamond-Shaped Body Contact for Silicon on Insulator MOSFET



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If I recall correctly it is fullydepleted SOI FDSOI that has that characteristic. DiamondShaped Body Contact for Silicon on Insulator MOSFET 9783843389518 9783843389518 3843389519 Electronics . In one embodiment the present invention substitutes an insulator for at least a portion of the gate layer in the regions between the transistor and the body contact. Sections 3 and 4 present two FD SOI transistors respectively ultrathin body and thin buried oxide UTBB.


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MOSFET with diamondshaped body contact DSBC is shown. PFEIFFER AbstractA novel lateral bipolar transistor structure in siliconon insulator SOI is presented. In this book a simple and high performance diamondshaped body contact DSBC for PD SOI devices is presented. by A Daghighi 2017 Several DSBC devices along with conventional body contact CBC structures are laid out using 0.35 m SOI MOSFET foundry process. The Diamondshaped body contact DSBC approach for low and highvoltage . It is also shown that the threshold voltage of proposed device. The results of 3D simulations of current drive and body. efficiency of the body contact is reduced as a result of an increase of body resistance. This paper suggests and investigates a pn structure which emulates as a MOSFET. An area efficient body contact for low and high voltage SOI MOSFET devices . Keywords BodyContact Linearity Ou tputConductance MOSFET SilicononInsulator. The Diamondshaped body contact DSBC approach for low and highvoltage SOI MOSFET was already presented and the performance .