If I recall correctly it is fullydepleted SOI FDSOI that has that characteristic. DiamondShaped Body Contact for Silicon on Insulator MOSFET 9783843389518 9783843389518 3843389519 Electronics . In one embodiment the present invention substitutes an insulator for at least a portion of the gate layer in the regions between the transistor and the body contact. Sections 3 and 4 present two FD SOI transistors respectively ultrathin body and thin buried oxide UTBB.
MOSFET with diamondshaped body contact DSBC is shown. PFEIFFER AbstractA novel lateral bipolar transistor structure in siliconon insulator SOI is presented. In this book a simple and high performance diamondshaped body contact DSBC for PD SOI devices is presented. by A Daghighi 2017 Several DSBC devices along with conventional body contact CBC structures are laid out using 0.35 m SOI MOSFET foundry process. The Diamondshaped body contact DSBC approach for low and highvoltage . It is also shown that the threshold voltage of proposed device. The results of 3D simulations of current drive and body. efficiency of the body contact is reduced as a result of an increase of body resistance. This paper suggests and investigates a pn structure which emulates as a MOSFET. An area efficient body contact for low and high voltage SOI MOSFET devices . Keywords BodyContact Linearity Ou tputConductance MOSFET SilicononInsulator. The Diamondshaped body contact DSBC approach for low and highvoltage SOI MOSFET was already presented and the performance .